Mainstream front and back electrode design, strong adaptability of the module side, compatible with half-cell modules
In-depth optimization of the thermal oxidation process and PE coating process for the front to ensure excellent PID resistance
Mainstream wafers, processed for low wafer thickness loss and low thermal stress, giving the product exceptional mechanical load performance
Mainstream light-induced degradation (LID) equipment to ensure high resistance to LID
Fully automated appearance, EL, and electrical performance testing equipment to ensure stable quality